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Structural Characterization of ZrO2 Thin Films Produced via Self-Assembled Monolayer-Mediated Deposition from Aqueous Dispersions

机译:自组装单层介导的水分散体沉积制备的ZrO2薄膜的结构表征

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摘要

Thin ZrO2 films were produced at 323 K by the deposition of colloids from stable, aqueous dispersions (formed from 4 mM Zr(SO4)2 in 0.4 N HCl) onto silicon wafer-supported, functionalized self-assembled monolayers (SAMs). The deposition took place without visible bulk precipitation. As-deposited and heat-treated films were characterized by high-resolution transmission electron, analytical electron and scanning electron microscopy. In each case, an amorphous layer was found between the Si single crystal and the nanocrystalline ZrO2 film. The amorphous layer of the as-deposited films was found to be composed of two distinct layers: SAM and SiO2. Upon heat treatment at 773 K for 2 h in air or Ar, the SAM layer was no longer observed, suggesting that it decomposes and is removed completely in either atmosphere. The as-deposited films had a grain size of ~5 nm throughout the film thickness. Following heat treatment, a slight increase in grain size was observed. Deposition without the SAM was also attempted, but failed to produce a strongly adherent, uniform film.
机译:通过将胶体从稳定的水性分散体(由在0.4 N HCl中的4 mM Zr(SO4)2在0.4 N HCl中形成)沉积到硅胶片支撑的功能化自组装单分子膜(SAMs)上,在323 K时产生ZrO2薄膜。沉积没有可见的大量沉淀发生。沉积和热处理过的薄膜通过高分辨率透射电子,分析电子和扫描电子显微镜表征。在每种情况下,在Si单晶和纳米晶ZrO2膜之间都发现了非晶层。发现所沉积的膜的非晶层由两个不同的层组成:SAM和SiO 2。在773 K在空气或Ar中进行2 h热处理后,不再观察到SAM层,这表明该SAM层在任何一种气氛中均已分解并完全去除。所沉积的膜在整个膜厚度上的晶粒尺寸均为〜5 nm。热处理后,观察到晶粒尺寸略有增加。还尝试了在不使用SAM的情况下进行沉积,但是未能产生牢固粘附的均匀薄膜。

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